Simple Gate Driver Circuit For Igbt

• Hybrid Circuits Simplify IGBT Module Gate Drive IGBT gate drive circuits are subjected to high common mode dv Hybrid Circuits Simplify IGBT Module Gate Drive.
• Insulated Gate Bipolar Transistor IGBT Basics Abdus Sattar, IXYS Corporation 1 Low driving power and a simple drive circuit due to the input MOS gate.

MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS IGBT, it is simple to use IXDD408 or IXDD414 alone. One output pin of driver to the Gate lead of MOSFET/IGBT.

Application Note 9016 IGBT Basics 1 A power MOSFET allows for simple gate control circuit Fig. 23 shows an IGBT s short circuit modes in a motor drive.

IXYS Integrated Circuits Division s selection of IGBT MOSFET Gate Drivers includes: Low Side A desaturation detection circuit protects the power IGBT during a.

DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs capacitor whendiscussingdrive circuits. 2. IGBT / MOSFET DRIVE BASICS Hence the gate drive circuit has no.

An insulated-gate bipolar transistor The IGBT combines the simple gate-drive characteristics of MOSFETs with the high IGBT Integrated circuit IC JFET.

IGBT DRIVE USING MOSFET GATE DRIVERS voltages to develop in the gate drive circuit if it is not Bipolar IGBT gate drive using the U3708.

High voltage IGBT, IGBT gate driver or IGBT gate driver or high power IGBT for your electronic circuits or insulated gate bipolar transistor circuit.

XHP - FleXible High-Power Platform

The new housing for high-power IGBT modules is designed to cover the full-voltage range of IGBT chips from 3.3 to 6.5 kV. Principle applications of the new package are expected in industrial drives, traction, renewable energy and power transmission applications. Discover more about our XHP

The innovative technologies IGBT5 and. XT will at first extend the well-known PrimePACK portfolio. With these new technologies the power density can be increased by 25 or the life time can be extended by a factor 10. More about our PrimePACK TM Modules with IGBT5 and. XT

This module family provides all reliability characteristics known from the established PressFIT technology and comes up with advanced features. The complete housing family will follow the same mounting process and cover a possible current range up to 200 A distributed over the different housing sizes. Read more about our Smart Power Modules

Modules for Photo-voltaic String and Multi-String Inverters

Tailor-made modules for photo-voltaic string and multi-string inverters. Optimised inverter efficiency and performance can be achieved. Fast and solder-less assembly is possible using the proven PressFIT technology. Read more about our modules for Photo-voltaic String and Multi-String Inverters

Power modules available with Silicon Carbide SiC diodes and transistors. These key components for modern and innovative power electronic solutions aim for the highest power density and efficiency. Those targets can be achieved by using the chips as stand-alone components or in combination with silicon power devices in power modules. Find out more about our SiC Modules

IHM / IHV IGBT modules B-series

The well known IHM IGBT High-Power Modules IHV IGBT High-Voltage Modules are robust and work with supreme reliability at any temperature condition from -40/-50 C up to 150 C. IHM-B/IHV-B are offered in a range of 500 A to 3600 A at 1200 V to 4,5 kV, which enables them through different topologies half-bridge-, single switch-, chopper- and diode modules to be used in various high power inverter sizes. Read more about our IHM / IHV IGBT modules B-series

3.3 kV modules in IHV housing

The IHM/IHV product group covers all possible inverter power sizes as single switch, half-bridge-, chopper and diode modules. More about our 3.3 kV modules in IHV portfolio

The 4,5 kV trench plus Field stop IGBT and Field stop diode chips fill the gap between the voltage classes of 3.3 kV and 6.5 kV IGBT modules. More about our 4.5 kV modules

6.5 kV Modules in IHV housing

New RCDC technology introduced to address customers demand of high power density, efficiency, long lifecycle, reliability, improved temperature behavior and reduced systems costs in high voltage applications. It combines IGBT and diode function in one chip. IHV housing established a standard for high power IGBT modules which was used in countless applications all over the world. Read more about our 6.5 kV IGBT modules

Flexibility, optimal electrical performance and highest reliability. These are the keywords for a successful inverter layout. The 34 mm and 62 mm product family of Half Bridges and Single Switches with the state-of-the-art IGBT4 Chip Technology perfectly fits into modern inverter concepts for all kinds of applications. Our well-known 34 and 62 mm modules are the right choice for your design.

The innovative EconoPACK D-series takes care of reliable and solderless press-in contacts with PressFIT auxiliary terminals. The PressFIT contacts provide also the flexibility for a solder process, if required. The D-series is focused on a rugged and robust module design by injected molded control and power terminals and ultrasonic welded power terminals. Make the next step with the EconoPACK D-series

EconoPIM / EconoPACK 650V IGBT 4

The new 650V IGBT4-E4 is an optimized chip version designed with respect to the application needs. The new device features an improved softness during switch-off and as a result of the soft turn-off a reduced EMI effort. Read more about our EconoPIM / EconoPACK 650V IGBT 4

The EconoPACK 4 package perfectly fits into the well-known Econo portfolio. EconoPACK 4 features screw power terminal, providing excellent electric connection. DC and AC link are separated and distinguishable at one glance for ease of use. More about our EconoPACK 4 IGBT Modules

EconoDUAL 3 650V/ 1200V/ 1700V 600A

Infineon offers the well-established EconoDUAL 3 series. Our contribution to your success are new advanced assembly technologies, superb thermal performances to enable full power utilization, Plug and play upgrades of existing inverter designs and PressFIT and solder pin versions. Best in class: EconoDUAL 3 650V/ 1200V/ 1700V 600A

Evaluation Driver Board for EconoDUAL 3 Modules using a coreless transformer single-channel driver replaced by the EiceDRIVER 1ED020I12-F2

Equipped with EiceDRIVER 1ED020I12-FFor driving EconoDUAL 3

Evaluation Driver Board for PrimePACK Modules up to 1200V using a coreless transformer single-channel driver replaced by 1ED020I12-F2.

Equipped with EiceDRIVER 1ED020I12-FFor driving PrimePACK IGBT Modules

Gate Driver, IGBT Modules up to 1700V

This evaluation board for the 2ED300C17-S / -ST IGBT driver boards can be used for all medium and high power IGBT modules up to 1700V.

For equipping EiceDRIVER 2ED300C17-S / -ST

Evaluation Driver board for EconoPACK IGBT modules, using a coreless transformer single-channel driver replaced by 1ED020I12-F2.

Equipped with EiceDRIVER 1ED020I12-FFor driving EconoPACK IGBT Modules

Evaluation Driver Board for SmartPIM 1 Modules up to 1200V. Coreless transformer half-bridge IGBT drivers 2ED020I12-FI are used for gate control and protection.

Equipped with EiceDRIVER 2ED020I12-FIFor driving SmartPIM 1 Modules

Evaluation Driver Board for EasyPIM 2B PressFIT Modules up to 1200V. Coreless transformer halfbridge IGBT drivers 2ED020I12-FI are used for gate control and protection.

Equipped with EiceDRIVER 2ED020I12-FIFor driving EasyPIM 2B PressFIT Modules

Gate Driver, IGBT Modules up to 1200V

Evaluation Board for 1ED020I12-B2 - Galvanic isolated single channel IGBT driver IC with CT technology for 600V/1200V IGBTs.

Driving IGBTsFor equipping 1ED 1200V single channel EiceDRIVER

Evaluation Driver board for 650V 3-level EconoPACK 4 modules in NPC1-topology. Coreless transformer IGBT drivers replaced by 1ED020I12-F2 are used for gate control and protection.

Equipped with EiceDRIVER 1ED020I12-F2For driving 650V EconoPACK 4 3-level IGBT Modules NPC1

Evaluation Driver board for 650V Easy2B 3-level modules in NPC1-topology. Coreless transformer IGBT drivers replaced by 1ED020I12-F2 are used for gate control and protection.

Equipped with EiceDRIVER 1ED020I12-F2For driving Easy2B 3-level Modules

Evaluation Driver board for 1200V EconoPACK 4 3-Level Modules in NPC2-Topology. Coreless transformer IGBT drivers replaced by 1ED020I12-F2 are used for gate control and protection.

Equipped with EiceDRIVER 1ED020I12-F2For driving 1200V 3-level EconoPACK 4 modules NPC2

Evaluation Adapter board with booster stage for 62mm modules up to 1200V.

For connecting 1200V 62mm Modules and driver boards

Evaluation Adapter board with booster stage for 62mm modules up to 1700V.

For connecting 1700V 62mm Modules and driver boards

Evaluation Adapter board with booster stage for 1200V EconoDUAL 3 modules.

For connecting 1200V EconoDUAL 3 Modules and driver boards

Evaluation Adapter board with booster stage for 1700V EconoDUAL 3 modules.

For connecting 1700V EconoDUAL 3 Modules and driver boards

Evaluation Adapter board containing a booster stage for driving 1200V PrimePACK in single or parallel configuration.

For connecting 1200V PrimePACK IGBT Modules and driver boards

Evaluation Adapter board containing a booster stage for driving 1700V PrimePACK in single or parallel configuration.

For connecting 1700V PrimePACK IGBT Modules and driver boards

Evaluation Adapter Board with booster stage for EconoPACK 4 3-Level Modules in NPC1-Topology 650V

For connecting 650V EconoPACK 4 IGBT Modules NPC1 and Driver boards

Evaluation Adapter board with booster stage for 1200V EconoPACK 4 3-Level Modules in NPC2-Topology.

For connecting 1200V EconoPACK 4 IGBT Modules NPC2 and Driver boards

Adapter board with booster stage for 1200V IHM modules 130mm x 140mm. The IGBT module is to be ordered separately.

For connecting 1200V IHM IGBT Modules and driver boards

Evaluation Adapter board with booster stage for IHM modules up to 1700V 130mm x 140mm.

For connecting 1700V IHM IGBT Modules and driver boards

Evaluation Adapter Board with booster stage for IHM IGBT Modules up to 1200V 140mm x 190mm.

Evaluation Adapter Board with booster stage for IHM IGBT Modules up to 1700V 140mm x 190mm.

EiceDRIVER Safe - Dual channel IGBT gate driver board with reinforced isolation

For driving IGBT modules up to 1700V

A thermal interface material, especially developed for and pre-applied to Infineon s power modules outperforms the general purpose materials available.

EiceDRIVER 2EDL Driver IC Family

EiceDRIVER 2EDL is a 600V half bridge gate driver IC family basing on level-shifter SOI Silicon on Insulator technology, which integrates low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications.

Customers of power electronics require ever more modern, easy connection technologies, which also provide a higher reliability to meet the trends to higher temperatures and new applications.PressFIT is a force fitting technology for power semiconductor modules, which offers these possibilities.

The new 4.5kV IGBT modules are optimized for use in traction drives and high-voltage DC transmission systems.

Infineon provides a comprehensive portfolio of high-power products for Power Conversion, to help its customers to achieve their aims. These high-performance products boost the reliability and efficiency of inverters for photovoltaic or wind applications.

Advanced Transmission Distribution EN

Thyristors have dominated this application for many decades. Nowadays thyristors as well as IGBTs are used in HVDC systems and FACTS to fulfill different needs.

Renewable energy from offshore wind farms

Energy means life: It heats houses, powers cars and lights megacities. The global appetite for energy is voracious, while resources are dwindling. One third of the energy consumed worldwide is electricity and the trend is rising. The name of the key energy source of the future is energy efficiency. Optimal electricity use is achieved by harnessing smart semiconductor technology: Innovative chip solutions fine-tune cars, industrial plants, consumer and household electronics to use less energy.

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